| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
FQP3N80C • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconduc |
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Fairchild Semiconductor |
800V N-Channel MOSFET • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 68 nC) • Low Crss ( typical 30pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability September 2006 QFET ® Description These N-Channel enhancement mode power fi |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 8.0A, 800V, RDS(on) = 0.75Ω @VGS = 10 V Low gate charge ( typical 68 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Rating |
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Fairchild Semiconductor |
FQA13N80 • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 68 nC) • Low Crss ( typical 30pF) www.DataSheet4U.com • Fast switching • 100% avalanche tested • Improved dv/dt capability ® Description These N-Channel enhancement mode power f |
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Fairchild Semiconductor |
800V N-Channel MOSFET • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconduc |
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Fairchild Semiconductor |
MOSFET • 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A • Low Gate Charge (Typ. 68 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDS |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 5 " " TO-220 FQP Series ! S Absolute Maximum Ratings S |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 3.800 Ω (Typ.) 1 2 3 SSP3N80A BVDSS = 800 V RDS(on) = |
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Fairchild Semiconductor |
800V N-Channel MOSFET • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconduc |
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Fairchild Semiconductor |
Bi-Directional Triode Thyristor Planar Silicon 5 0.5 10 2 - 40 ~ 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 1.8A, 800V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S 3 " " 5 TO-220F FQPF Series ! S Absolute Maximum Rati |
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