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FQA13N80 |
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| Part Number | FQA13N80 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 68 nC) • Low Crss ( typical 30pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability September 2006 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient swit... |
| Document |
 FQA13N80 Data Sheet
PDF 822.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQA13N80_F109 |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FQA13N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 3 | FQA13N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 4 | FQA13N50CF |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 5 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|