FQAF13N80 |
Part Number | FQAF13N80 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • 8.0A, 800V, RDS(on) = 0.75Ω @VGS = 10 V Low gate charge ( typical 68 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQAF13N80 800 8.0 5.1 32 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Volta... |
Document |
FQAF13N80 Data Sheet
PDF 716.16KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQAF13N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
2 | FQAF10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
3 | FQAF11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
4 | FQAF11N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
5 | FQAF11N90C |
Fairchild Semiconductor |
MOSFET |