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FQB3N80 |
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| Part Number | FQB3N80 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB3N80 / FQI3N80 800 3.0 1.9 12 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/... |
| Document |
 FQB3N80 Data Sheet
PDF 661.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQB3N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET |
|
| 2 | FQB3N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 3 | FQB3N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 4 | FQB3N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 5 | FQB3N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|