FQA13N80_F109 |
Part Number | FQA13N80_F109 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
Features |
• 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A • Low Gate Charge (Typ. 68 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source ... |
Document |
FQA13N80_F109 Data Sheet
PDF 1.99MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQA13N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
2 | FQA13N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
3 | FQA13N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
4 | FQA13N50CF |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
5 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |