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13N80 |
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| Part Number | 13N80 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 68 nC) • Low Crss ( typical 30pF) www.DataSheet4U.com • Fast switching • 100% avalanche tested • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient swi... |
| Document |
 13N80 Data Sheet
PDF 862.11KB |
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