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The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4006 is Pb-free. Features z Trench Technology z Supper high density cell design z Excell.
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
WNM4006
Http//:www.willsemi.com
SOT-23
D 3
12 GS Pin configuration (Top view)
W46
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W46
*
= Device Code = Month (A~Z)
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
Marking
Order information
Device
Package
Shipping
WNM4006-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2012 - Rev.1.0
Abso.
WNM4006 - TY Semiconductor
The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide.
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