The WNM4002 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small signal switch. Standard product WNM4002 is Pb-free. Features z Trench N-Channel z Supper high density cell design for extremely low Rds(on) z Exceptiona.
z Trench N-Channel z Supper high density cell design for extremely low
Rds(on) z Exceptional ON resistance and maximum DC
current capability z Small package design with SOT-523
WNM4002
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D 3
12 GS
SOT-523
D 3
12 GS
Pin Configuration
3
N3
*
12
N3 = Device Code
* = Month
Marking
Applications
z Driver: Relays, Solenoids, Lamps, Hammers z Power supply converters circuit z Load/Power Switching for potable device
Order Information
Device
Package
WNM4002-3/TR SOT-523
Shipping 3000/Tape&Reel
Will Semiconductor Ltd. 1 Dec,2011 - Rev. 1.5
Absolute Maximum Ratings
(TA=2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WNM4001 |
Will Semiconductor |
Small Signal N-Channel MOSFET | |
2 | WNM4006 |
Will Semiconductor |
N-Channel MOSFET | |
3 | WNM4006 |
TY Semiconductor |
N-Channel MOSFET | |
4 | WNM4153 |
Will Semiconductor |
N-Channel MOSFET | |
5 | WNM01N10 |
WillSEMI |
MOSFET | |
6 | WNM01N11 |
WillSEMI |
MOSFET | |
7 | WNM05N60 |
WillSEMI |
MOSFET | |
8 | WNM05N60F |
WillSEMI |
MOSFET | |
9 | WNM07N60 |
Will Semiconductor |
N-Channel MOSFET | |
10 | WNM07N60F |
Will Semiconductor |
N-Channel MOSFET | |
11 | WNM07N65 |
Will Semiconductor |
N-Channel MOSFET | |
12 | WNM07N65F |
Will Semiconductor |
N-Channel MOSFET |