WNM4001 - Will Semiconductor

WNM4001 Small Signal N-Channel MOSFET

The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small signal switch. Standard product WNM4001 is Pb-free. Features z Trench N-Channel z Supper high density cell design for extremely low Rds(on) z Exceptiona.

Features

z Trench N-Channel z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with SOT-523 WNM4001 Http://www.willsemi.com Top D 3 12 GS SOT-523 D 3 12 GS Pin Configuration 3 N3
* 12 N3 = Device Code
* = Month Marking Applications z Driver: Relays, Solenoids, Lamps, Hammers z Power supply converters circuit z Load/Power Switching for potable device Order Information Device Package WNM4001-3/TR SOT-523 Shipping 3000/Tape&Reel Will Semiconductor Ltd. 1 Nov, 2011 - Rev. 1.3 Absolute Maximum Ratings (T.