Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
WNM07N60F |
Click to view a larger image
| Part Number | WNM07N60F |
| Manufacturer | Will Semiconductor |
| Description | The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is sui... |
| Features |
600V@TJ=25°C Typ.RDS(on)=1.0 Ω Low gate charge 100% avalanche tested 100% Rg tested D GDS TOT-O22- 0 G S GD S TO-220F WNM07N60 =Devices code Y Y =Year WW =Week WNM07N60F =Devices code Y Y =Year WW =Week Order Information Device Package WNM07N60_3/T TO-220 WNM07N60F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25oC unless otherwise noted Parameter Symbol WNM07N60 WNM07N60F Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current Single Pulsed Avalanche Energy C VDS 600 VGS ±30 7 ID 4.8 600... |
| Document |
 WNM07N60F Data Sheet
PDF 1.70MB |
| Distributor | Stock | Price | Buy |
|---|
