Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
WNM01N10 |
Click to view a larger image
| Part Number | WNM01N10 |
| Manufacturer | WillSEMI |
| Description | The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC... |
| Features |
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Small package SOT-23 Applications Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging NA = Device Code Y = Year W = Week Marking Order information Device Package WNM01N10-3/TR SOT-23 Shipping 3000/Reel&Tape Will Semiconductor Ltd. 1 2016/01/18 – Rev. 1.2 Absolute Maxim... |
| Document |
 WNM01N10 Data Sheet
PDF 0.96MB |
| Distributor | Stock | Price | Buy |
|---|
