VSMA1085600X02 - Vishay

VSMA1085600X02 High Power Infrared Emitting Diode

As part of the Astral portfolio, the VSMA1085600X02 is an infrared, 850 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES • Package type: surface-mount • Package form: high power SMD with lens • Dimensions (L x W x H in mm): .

Features

a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES
• Package type: surface-mount
• Package form: high power SMD with lens
• Dimensions (L x W x H in mm): 3.4 x 3.4 x 1.8
• Peak wavelength: λp = 850 nm
• AEC-Q102 qualified
• Angle of half intensity: ϕ = ± 60°
• Designed for high drive currents: up to 1.5 A (DC) and up to 5 A (pulsed)
• Low thermal resistance: 5 K/W < RthJSP < 9 K/W
• ESD: up to 5 kV (according to ANSI / ESDA / JEDEC® JS-001)
• Floor life: 168 h, MSL 3, according to J-STD-020E .