Features N-Channel,10V Logic Level Control Enhancement mode VitoMOS® Ⅱ Technology Fast Switching and High efficiency 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSM003N06HS-G 65V/150A N-Channel Advanced Power MOSFET V DS 65 V R @ DS(on),TYP VGS=10 V 3.0 mΩ ID 150 A TO-263 Part ID VSM003N06HS-G Package Type TO-263 Marking.
N-Channel,10V Logic Level Control
Enhancement mode
VitoMOS® Ⅱ Technology
Fast Switching and High efficiency
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VSM003N06HS-G
65V/150A N-Channel Advanced Power MOSFET
V DS
65 V
R @ DS(on),TYP VGS=10 V
3.0 mΩ
ID
150 A
TO-263
Part ID VSM003N06HS-G
Package Type TO-263
Marking 003N06H
Tape and reel information
1000pcs/Reel
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS
Diode continuous forward current
ID
Continuous dr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSM003N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSM002NE4MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSM007N07MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VSM007P06MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
5 | VSM008N07HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSM012N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSM012N12MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSM030P10MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
9 | VSM0805 |
Vishay Siliconix |
Bulk Metal Foil Technology Discrete Surface Mount Chip Resistors | |
10 | VSMA1085250 |
Vishay |
High Power Infrared Emitting Diode | |
11 | VSMA1085600X02 |
Vishay |
High Power Infrared Emitting Diode | |
12 | VSMA1094250X02 |
Vishay |
High Power Infrared Emitting Diode |