VSM012N06HS - Vanguard Semiconductor

VSM012N06HS N-Channel Advanced Power MOSFET

Features  N-Channel，Logic Level 10V  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSM012N06HS 60V/55A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 8.5 mΩ I D 55 A TO-263 Part ID VST012N06HS Package Type TO-263 Marking 012N06H Tape and reel informatio.

Features

 N-Channel，Logic Level 10V
 Enhancement mode
 Very low on-resistance
 Fast Switching
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant VSM012N06HS 60V/55A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 8.5 mΩ I D 55 A TO-263 Part ID VST012N06HS Package Type TO-263 Marking 012N06H Tape and reel information 800pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Ava.