VSM007N07MS - Vanguard Semiconductor

VSM007N07MS N-Channel Advanced Power MOSFET

Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSM007N07MS 80V/80A N-Channel Advanced Power MOSFET V DS 80 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V 8 mΩ 9 mΩ I D 80 A TO-263 Part ID VSM007N07MS Package .

Features

 N-Channel，5V Logic Level Control
 Enhancement mode
 Low on-resistance RDS(on) @ VGS=4.5 V
 VitoMOS® Technology
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant VSM007N07MS 80V/80A N-Channel Advanced Power MOSFET V DS 80 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V 8 mΩ 9 mΩ I D 80 A TO-263 Part ID VSM007N07MS Package Type TO-263 Marking 007N07M Tape and reel information 1000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current.