VSM012N12MS - Vanguard Semiconductor

VSM012N12MS N-Channel Advanced Power MOSFET

Features  N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VSM012N12MS 120V/63A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 120 V 11.5 mΩ 13 mΩ 63 A TO-263 Part ID VSM012N12MS Package T.

Features

 N-Channel，5V Logic Level Control
 Enhancement mode
 Fast Switching
 Very low on-resistance RDS(on) @ VGS=4.5 V
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VSM012N12MS 120V/63A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 120 V 11.5 mΩ 13 mΩ 63 A TO-263 Part ID VSM012N12MS Package Type TO-263 Marking Tape and reel information 012N12M 800pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-So.