VSM002NE4MS-G - Vanguard Semiconductor

VSM002NE4MS-G N-Channel Advanced Power MOSFET

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSM002NE4MS-G 45V/200A N-Channel Advanced Power MOSFET V DS 45 V R @ DS(on),TYP VGS=10 V 1.8 mΩ R @ DS(on),TYP VGS=4.5 V 2.7 mΩ ID 200 A TO-263 Part ID VSM00.

Features

 Enhancement mode
 Low on-resistance RDS(on) @ VGS=4.5 V
 VitoMOS® Ⅱ Technology
 Fast Switching and High efficiency
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant VSM002NE4MS-G 45V/200A N-Channel Advanced Power MOSFET V DS 45 V R @ DS(on),TYP VGS=10 V 1.8 mΩ R @ DS(on),TYP VGS=4.5 V 2.7 mΩ ID 200 A TO-263 Part ID VSM002NE4MS-G Package Type TO-263 Marking 002NE4M Tape and reel information 1000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continu.