VSD160N10MS - Vanguard Semiconductor

VSD160N10MS N-Channel Advanced Power MOSFET

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSD160N10MS 100V/8A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5 V ID 100 V 150 mΩ 165 mΩ 8A TO-252 Part ID VSD160N10MS Package Type TO-252 Marking 160N10 Tape and reel inform.

Features

 N-Channel
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 Fast Switching
 Pb-free lead plating; RoHS compliant VSD160N10MS 100V/8A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5 V ID 100 V 150 mΩ 165 mΩ 8A TO-252 Part ID VSD160N10MS Package Type TO-252 Marking 160N10 Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① EAS.