VSD005N03MS - Vanguard Semiconductor

VSD005N03MS N-Channel Advanced Power MOSFET

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VSD005N03MS 30V/105A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 3 mΩ 4.4 mΩ 105 A TO-252 Part ID VSD005N03MS Package Type TO-252 Markin.

Features

 N-Channel，5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VSD005N03MS 30V/105A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 3 mΩ 4.4 mΩ 105 A TO-252 Part ID VSD005N03MS Package Type TO-252 Marking 005N03M Tape and reel information 2500PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM E.