Features N-Channel,10V Logic Level Control Enhancement mode Very low on-resistance Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD003N06HS 60V/140A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 60 V 4.0 mΩ 140 A TO-252 Part ID VSD003N06HS Package Type TO-252 Marking 003N06H Tape and reel infor.
N-Channel,10V Logic Level Control
Enhancement mode
Very low on-resistance
Fast Switching
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VSD003N06HS
60V/140A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10V ID
60 V 4.0 mΩ 140 A
TO-252
Part ID VSD003N06HS
Package Type TO-252
Marking 003N06H
Tape and reel information
2500pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ① IA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSD004N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSD004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
3 | VSD005N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VSD005N05LS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VSD006N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSD006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
7 | VSD007N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSD007N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSD007N07MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSD007NE4MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSD007P06MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
12 | VSD008N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |