VSD100P10MS - Vanguard Semiconductor

VSD100P10MS P-Channel Advanced Power MOSFET

Features  P-Channel，-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD100P10MS -100V/-17A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -100 V 92 mΩ 95 mΩ -17 A TO-252 Part ID Package Type .

Features

 P-Channel，-5V Logic Level Control
 Very low on-resistance RDS(on) @ VGS=-4.5 V
 Fast Switching
 Enhancement mode
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant VSD100P10MS -100V/-17A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -100 V 92 mΩ 95 mΩ -17 A TO-252 Part ID Package Type VSD100P10MS TO-252 Marking Tape and reel information 100P10M 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Common Ratings VGS Gate-Source Voltage V(BR)DSS TSTG TJ IS Drain-Source Breakdown Voltag.