Features N-Channel Enhancement mode Very low on-resistance @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant VSD140N15MS 150V/10A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID 150 V 125 mΩ 115 mΩ 10 A TO-252 Part ID Package Type VSD140N15MS TO-252 Marking 140N15M Tap.
N-Channel
Enhancement mode
Very low on-resistance @ VGS=4.5 V
Fast Switching
100% Avalanche test
Pb-free lead plating; RoHS compliant
VSD140N15MS
150V/10A N-Channel Advanced Power MOSFET
V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID
150 V 125 mΩ 115 mΩ 10 A
TO-252
Part ID
Package Type
VSD140N15MS
TO-252
Marking 140N15M
Tape and reel information
2500pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
ID
IDM PD IS EAS TJ TSTG
Continuous drain current@VGS=10V
Pulse dra.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSD140N15MD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSD10040AF |
Vanguard Semiconductor |
SCHOTTKY BARRIER RECTIFIERS | |
3 | VSD100P10MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
4 | VSD10100AF |
Vanguard Semiconductor |
SCHOTTKY BARRIER RECTIFIERS | |
5 | VSD160N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSD003N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSD004N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSD004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
9 | VSD005N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSD005N05LS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSD006N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSD006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET |