Features N-Channel,3.3V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=3.3 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD005N05LS 50V/80A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=5V R @DS(on),TYP VGS=3.3V ID 50 V 4.5 mΩ 4.9 mΩ 80 A TO-252 Part ID VSD005N05LS Package T.
N-Channel,3.3V Logic Level Control
Enhancement mode
Very low on-resistance RDS(on) @ VGS=3.3 V
Fast Switching
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VSD005N05LS
50V/80A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=5V R @DS(on),TYP VGS=3.3V ID
50 V 4.5 mΩ 4.9 mΩ 80 A
TO-252
Part ID VSD005N05LS
Package Type TO-252
Marking 005N05L
Tape and reel information
2500pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSD005N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSD003N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSD004N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VSD004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
5 | VSD006N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSD006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
7 | VSD007N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSD007N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSD007N07MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSD007NE4MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSD007P06MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
12 | VSD008N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |