Features N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD026N04MS 40V/30A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 40 V 19 mΩ 22 mΩ 30 A TO-252 Part ID VSD026N04MS Package Type TO-252 Marking 026N0.
N-Channel
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VSD026N04MS
40V/30A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID
40 V 19 mΩ 22 mΩ 30 A
TO-252
Part ID VSD026N04MS
Package Type TO-252
Marking 026N04M
Tape and reel information
2500pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pul.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSD020P06MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
2 | VSD025N10HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSD025N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VSD025NE5MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VSD025P04MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
6 | VSD003N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSD004N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSD004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
9 | VSD005N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSD005N05LS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSD006N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSD006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET |