Features N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD025N10MS 100V/32A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 20 mΩ R @DS(on),TYP VGS=4.5V 22 mΩ I D 32 A TO-252 Part ID VSD025N10MS Package Type TO-252 Marki.
N-Channel
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VSD025N10MS
100V/32A N-Channel Advanced Power MOSFET
V DS
100 V
R @DS(on),TYP VGS=10 V
20 mΩ
R @DS(on),TYP VGS=4.5V
22 mΩ
I D 32 A
TO-252
Part ID VSD025N10MS
Package Type TO-252
Marking 025N10M
Tape and reel information
2500pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSD025N10HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSD025NE5MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSD025P04MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
4 | VSD020P06MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
5 | VSD026N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSD003N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSD004N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSD004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
9 | VSD005N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSD005N05LS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSD006N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSD006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET |