Features y N-Channel y Enhancement mode y Very low on-resistance RDS(on) @ VGS=4.5 V y Fast Switching y High conversion efficiency y Pb-free lead plating; RoHS compliant VSD025NE5MS 58V/30A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5 V ID 58 V 15 mΩ 30 A TO-252 Part ID VSD025NE5MS Package Type TO-252 Marking 025NE5MS Tape and reel info.
y N-Channel y Enhancement mode y Very low on-resistance RDS(on) @ VGS=4.5 V y Fast Switching y High conversion efficiency y Pb-free lead plating; RoHS compliant VSD025NE5MS 58V/30A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5 V ID 58 V 15 mΩ 30 A TO-252 Part ID VSD025NE5MS Package Type TO-252 Marking 025NE5MS Tape and reel information 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current teste.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSD025N10HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSD025N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSD025P04MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
4 | VSD020P06MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
5 | VSD026N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSD003N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSD004N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSD004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
9 | VSD005N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSD005N05LS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSD006N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSD006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET |