The VNLD5300-E is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the device in an overload condition. In case of long duration o.
Type VNLD5300-E Vclamp 41 V RDS(on) ID 300 m 2A Description The VNLD5300-E is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the device in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention.Thermal shutdown, with automatic restart, allows the device to recover n.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNLD5090-E |
STMicroelectronics |
low-side driver | |
2 | VNLD5160-E |
STMicroelectronics |
fully protected low-side driver | |
3 | VNL08C351-INV |
Toshiba |
INVERTER | |
4 | VNL5030J-E |
STMicroelectronics |
fully protected low-side driver | |
5 | VNL5030S5-E |
STMicroelectronics |
fully protected low-side driver | |
6 | VNL5090N3-E |
STMicroelectronics |
fully protected low-side driver | |
7 | VNL5090S5-E |
STMicroelectronics |
fully protected low-side driver | |
8 | VNL5160N3-E |
STMicroelectronics |
fully protected low-side driver | |
9 | VNL5160S5-E |
STMicroelectronics |
fully protected low-side driver | |
10 | VNL5300S5-E |
STMicroelectronics |
fully protected low-side driver | |
11 | VN0104 |
Supertex |
N-Channel Vertical DMOS FET | |
12 | VN0104N2 |
Supertex |
Understanding MOSFET |