The VNL5300S5-E is a monolithic device made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the device in an overload condition. In case of long duratio.
SO-8
Type VNL5300S5-E
Vclamp 41 V
RDS(on)
ID
300 mΩ
2A
• Drain current: 2 A
• ESD protection
• Overvoltage clamp
• Thermal shutdown
• Current and power limitation
• Very low standby current
• Very low electromagnetic susceptibility
• Compliant with European directive 2002/95/EC
• Open drain status output
OMNIFET III fully protected low-side driver
Datasheet - production data
Description
The VNL5300S5-E is a monolithic device made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery.
Built-in thermal shu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNL5030J-E |
STMicroelectronics |
fully protected low-side driver | |
2 | VNL5030S5-E |
STMicroelectronics |
fully protected low-side driver | |
3 | VNL5090N3-E |
STMicroelectronics |
fully protected low-side driver | |
4 | VNL5090S5-E |
STMicroelectronics |
fully protected low-side driver | |
5 | VNL5160N3-E |
STMicroelectronics |
fully protected low-side driver | |
6 | VNL5160S5-E |
STMicroelectronics |
fully protected low-side driver | |
7 | VNL08C351-INV |
Toshiba |
INVERTER | |
8 | VNLD5090-E |
STMicroelectronics |
low-side driver | |
9 | VNLD5160-E |
STMicroelectronics |
fully protected low-side driver | |
10 | VNLD5300-E |
STMicroelectronics |
low-side driver | |
11 | VN0104 |
Supertex |
N-Channel Vertical DMOS FET | |
12 | VN0104N2 |
Supertex |
Understanding MOSFET |