The VNL5160N3-E and VNL5160S5-E are monolithic devices, made using STMicroelectronics® VIPower® Technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short circuit. Output current limitation protects the devices in an overload condition. In th.
Type VNL5160N3-E VNL5160S5-E
Vclamp 41 V
RDS(on)
ID
160 mΩ 3.5 A
■ Drain current:3.5A
■ ESD protection
■ Overvoltage clamp
■ Thermal shutdown
■ Current and power limitation
■ Very low standby current
■ Very low electromagnetic susceptibility
■ In compliance with the 2002/95/EC European
directive
■ Open drain status output(a)
■ Specially intended for R10W or 2x R5W
automotive signal lamps
2
3 2 1 SOT-223
SO-8
Description
The VNL5160N3-E and VNL5160S5-E are monolithic devices, made using STMicroelectronics® VIPower® Technology, intended for driving resistive or inductive loads with one .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNL5160N3-E |
STMicroelectronics |
fully protected low-side driver | |
2 | VNL5030J-E |
STMicroelectronics |
fully protected low-side driver | |
3 | VNL5030S5-E |
STMicroelectronics |
fully protected low-side driver | |
4 | VNL5090N3-E |
STMicroelectronics |
fully protected low-side driver | |
5 | VNL5090S5-E |
STMicroelectronics |
fully protected low-side driver | |
6 | VNL5300S5-E |
STMicroelectronics |
fully protected low-side driver | |
7 | VNL08C351-INV |
Toshiba |
INVERTER | |
8 | VNLD5090-E |
STMicroelectronics |
low-side driver | |
9 | VNLD5160-E |
STMicroelectronics |
fully protected low-side driver | |
10 | VNLD5300-E |
STMicroelectronics |
low-side driver | |
11 | VN0104 |
Supertex |
N-Channel Vertical DMOS FET | |
12 | VN0104N2 |
Supertex |
Understanding MOSFET |