The VNLD5090-E is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the device in an overload condition. In case of long duration o.
Type VNLD5090-E
Vclamp 41 V
RDS(on) 90 m
ID 25 A
AEC-Q100 qualified
Drain current: 13 A
ESD protection
Overvoltage clamp
Thermal shutdown
Current and power limitation
Very low standby current
Very low electromagnetic susceptibility
In compliance with the 2002/95/EC European
directive
Description
The VNLD5090-E is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current l.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNLD5160-E |
STMicroelectronics |
fully protected low-side driver | |
2 | VNLD5300-E |
STMicroelectronics |
low-side driver | |
3 | VNL08C351-INV |
Toshiba |
INVERTER | |
4 | VNL5030J-E |
STMicroelectronics |
fully protected low-side driver | |
5 | VNL5030S5-E |
STMicroelectronics |
fully protected low-side driver | |
6 | VNL5090N3-E |
STMicroelectronics |
fully protected low-side driver | |
7 | VNL5090S5-E |
STMicroelectronics |
fully protected low-side driver | |
8 | VNL5160N3-E |
STMicroelectronics |
fully protected low-side driver | |
9 | VNL5160S5-E |
STMicroelectronics |
fully protected low-side driver | |
10 | VNL5300S5-E |
STMicroelectronics |
fully protected low-side driver | |
11 | VN0104 |
Supertex |
N-Channel Vertical DMOS FET | |
12 | VN0104N2 |
Supertex |
Understanding MOSFET |