2 1 2 3 SOT-223 SO-8 Features Type VNL5090N3-E 41 V VNL5090S5-E Vclamp RDS(on) 90 mΩ ID 13 A The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperatur.
Type VNL5090N3-E 41 V VNL5090S5-E Vclamp RDS(on) 90 mΩ ID 13 A The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the devices in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention.Thermal shutdown, with automatic restart, allows the dev.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNL5090N3-E |
STMicroelectronics |
fully protected low-side driver | |
2 | VNL5030J-E |
STMicroelectronics |
fully protected low-side driver | |
3 | VNL5030S5-E |
STMicroelectronics |
fully protected low-side driver | |
4 | VNL5160N3-E |
STMicroelectronics |
fully protected low-side driver | |
5 | VNL5160S5-E |
STMicroelectronics |
fully protected low-side driver | |
6 | VNL5300S5-E |
STMicroelectronics |
fully protected low-side driver | |
7 | VNL08C351-INV |
Toshiba |
INVERTER | |
8 | VNLD5090-E |
STMicroelectronics |
low-side driver | |
9 | VNLD5160-E |
STMicroelectronics |
fully protected low-side driver | |
10 | VNLD5300-E |
STMicroelectronics |
low-side driver | |
11 | VN0104 |
Supertex |
N-Channel Vertical DMOS FET | |
12 | VN0104N2 |
Supertex |
Understanding MOSFET |