The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the devices in an overload condition. In case.
SO-8
Type VNL5030J-E VNL5030S5-E
Vclamp 41 V
RDS(on) 30 mΩ
ID 25 A
• Automotive qualified
• Drain current: 25 A
• ESD protection
• Overvoltage clamp
• Thermal shutdown
• Current and power limitation
• Very low standby current
• Very low electromagnetic susceptibility
• Compliant with European directive 2002/95/EC
• Open drain status output
VNL5030J-E VNL5030S5-E
OMNIFET III fully protected low-side driver
Datasheet - production data
Description
The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or indu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNL5030S5-E |
STMicroelectronics |
fully protected low-side driver | |
2 | VNL5090N3-E |
STMicroelectronics |
fully protected low-side driver | |
3 | VNL5090S5-E |
STMicroelectronics |
fully protected low-side driver | |
4 | VNL5160N3-E |
STMicroelectronics |
fully protected low-side driver | |
5 | VNL5160S5-E |
STMicroelectronics |
fully protected low-side driver | |
6 | VNL5300S5-E |
STMicroelectronics |
fully protected low-side driver | |
7 | VNL08C351-INV |
Toshiba |
INVERTER | |
8 | VNLD5090-E |
STMicroelectronics |
low-side driver | |
9 | VNLD5160-E |
STMicroelectronics |
fully protected low-side driver | |
10 | VNLD5300-E |
STMicroelectronics |
low-side driver | |
11 | VN0104 |
Supertex |
N-Channel Vertical DMOS FET | |
12 | VN0104N2 |
Supertex |
Understanding MOSFET |