The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip from over temperature and short circuit. The status output provides an indication of ope.
Source Breakdown Voltage Output Current (cont.) at T c = 85 o C o Value 40 14 14 -14 ± 10 -4 ± 10 2000 75 -40 to 150 -55 to 150 Unit V A A A mA V mA V W o o I OUT (RMS) RMS Output Current at T c = 85 C and f > 1Hz Reverse Output Current at T c = 85 C Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k Ω , 100 pF) Power Dissipation at T c = 25 C Junction Operating Temperature Storage Temperature o o C C CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/9 VND10BSP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VND10B |
STMicroelectronics |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
2 | VND10N06 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
3 | VND10N06-1 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
4 | VND14NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
5 | VND14NV04-1 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
6 | VND1NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
7 | VND05B |
STMicroelectronics |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
8 | VND05BSP |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
9 | VND3NV04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
10 | VND3NV04-1 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
11 | VND5004A-E |
STMicroelectronics |
high-side driver | |
12 | VND5004ASP30-E |
STMicroelectronics |
high-side driver |