The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics™ VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by.
Type
VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1
RDS(on) 120 mΩ
Ilim 3.5 A
Vclamp 40 V
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power MOSFET (analog driving)
■ Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive
2
3 2 1 SOT-223
SO-8
3 1
TO252 (DPAK)
3 2 1
TO251 (IPAK)
Description
The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VND3NV04-1 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
2 | VND05B |
STMicroelectronics |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
3 | VND05BSP |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
4 | VND10B |
STMicroelectronics |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
5 | VND10BSP |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
6 | VND10N06 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
7 | VND10N06-1 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
8 | VND14NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
9 | VND14NV04-1 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
10 | VND1NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
11 | VND5004A-E |
STMicroelectronics |
high-side driver | |
12 | VND5004ASP30-E |
STMicroelectronics |
high-side driver |