The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power BLOCK DIAGRAM MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by.
During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user’s standpoint is that a small DC current IISS (typ. 100µA) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VND10B |
STMicroelectronics |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
2 | VND10BSP |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
3 | VND10N06 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
4 | VND10N06-1 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
5 | VND14NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
6 | VND14NV04-1 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
7 | VND05B |
STMicroelectronics |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
8 | VND05BSP |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
9 | VND3NV04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
10 | VND3NV04-1 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
11 | VND5004A-E |
STMicroelectronics |
high-side driver | |
12 | VND5004ASP30-E |
STMicroelectronics |
high-side driver |