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VND10BSP |
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| Part Number | VND10BSP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels... |
| Features |
Source Breakdown Voltage Output Current (cont.) at T c = 85 o C
o
Value 40 14 14 -14 ± 10 -4 ± 10 2000 75 -40 to 150 -55 to 150
Unit V A A A mA V mA V W
o o
I OUT (RMS) RMS Output Current at T c = 85 C and f > 1Hz Reverse Output Current at T c = 85 C Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k Ω , 100 pF) Power Dissipation at T c = 25 C Junction Operating Temperature Storage Temperature
o o
C C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
2/9
VND10BSP
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junc... |
| Document |
 VND10BSP Data Sheet
PDF 217.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VND10B |
STMicroelectronics |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY |
|
| 2 | VND10N06 |
STMicroelectronics |
fully autoprotected Power MOSFET |
|
| 3 | VND10N06-1 |
STMicroelectronics |
fully autoprotected Power MOSFET |
|
| 4 | VND14NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET |
|
| 5 | VND14NV04-1 |
STMicroelectronics |
fully autoprotected Power MOSFET |
|