The VND05B, VND05B (011Y), VND05B (012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. This device has two channels, and a common diagnostic. Built-in thermal shutdown protects the chip from overtemperature and short circuit. The status output pro.
to VCC. BLOCK DIAGRAM
ORDER CODES HEPTAWATT vertical VND05B HEPTAWATT horizontal VND05B (011Y) HEPTAWATT in-line VND05B (012Y)
(
*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
November 1999
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www.DataSheet4U.com
VND05B / VND05B (011Y) / VND05B (012Y)
ABSOLUTE MAXIMUM RATING
Symbol V(BR)DSS IOUT IOUT(RMS) IR IIN -V CC ISTAT VESD PTOT Tj TSTG Parameter Drain-Source breakdown voltage Output current (continuous) at Tc=85°C RMS Output current at Tc=85°C and f > 1Hz Reverse output current at Tc=85°C Input current Reverse supply voltage Stat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VND05BSP |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
2 | VND10B |
STMicroelectronics |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
3 | VND10BSP |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
4 | VND10N06 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
5 | VND10N06-1 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
6 | VND14NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
7 | VND14NV04-1 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
8 | VND1NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
9 | VND3NV04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
10 | VND3NV04-1 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
11 | VND5004A-E |
STMicroelectronics |
high-side driver | |
12 | VND5004ASP30-E |
STMicroelectronics |
high-side driver |