uThe VND10B is a monolithic device made using dSTMicroelectronics VIPower Technology, rointended for driving resistive or inductive loads Pwith one side grounded. This device has two channels, and a common diagnostic. Built-in tethermal shut-down protects the chip from over letemperature and short circuit. oThe stat.
Figure 1. Package
Type
VDSS RDS(on)
In(1)
VCC
VND10B
40 V
0.1 Ω 3.4 A
26 V
)Note: 1. In= Nominal current according to ISO definition for high t(sside automotive switch. The Nominal Current is the
current at Tc = 85 °C for battery voltage of 13V which produces a voltage drop of 0.5 V.
duc
■ OUTPUT CURRENT (CONTINUOUS): ro14 A @ Tc=85°C PER CHANNEL P
■ 5V LOGIC LEVEL COMPATIBLE INPUT te
■ THERMAL SHUT-DOWN le
■ UNDER VOLTAGE PROTECTION so
■ OPEN DRAIN DIAGNOSTIC OUTPUT b
■ INDUCTIVE LOAD FAST DEMAGNETIZATION - O
■ VERY LOW STAND-BY POWER )DISSIPATION
ct(sDESCRIPTION uThe VND10B is a monolit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VND10BSP |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
2 | VND10N06 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
3 | VND10N06-1 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
4 | VND14NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
5 | VND14NV04-1 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
6 | VND1NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
7 | VND05B |
STMicroelectronics |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
8 | VND05BSP |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
9 | VND3NV04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
10 | VND3NV04-1 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
11 | VND5004A-E |
STMicroelectronics |
high-side driver | |
12 | VND5004ASP30-E |
STMicroelectronics |
high-side driver |