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VND10B |
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| Part Number | VND10B |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | uThe VND10B is a monolithic device made using dSTMicroelectronics VIPower Technology, rointended for driving resistive or inductive loads Pwith one side grounded. This device has two channels, and a c... |
| Features |
Figure 1. Package
Type
VDSS RDS(on)
In(1)
VCC
VND10B
40 V
0.1 Ω 3.4 A
26 V
)Note: 1. In= Nominal current according to ISO definition for high t(sside automotive switch. The Nominal Current is the
current at Tc = 85 °C for battery voltage of 13V which produces a voltage drop of 0.5 V.
duc ■ OUTPUT CURRENT (CONTINUOUS): ro14 A @ Tc=85°C PER CHANNEL P ■ 5V LOGIC LEVEL COMPATIBLE INPUT te ■ THERMAL SHUT-DOWN le ■ UNDER VOLTAGE PROTECTION so ■ OPEN DRAIN DIAGNOSTIC OUTPUT b ■ INDUCTIVE LOAD FAST DEMAGNETIZATION - O ■ VERY LOW STAND-BY POWER )DISSIPATION ct(sDESCRIPTION uThe VND10B is a monolit... |
| Document |
 VND10B Data Sheet
PDF 213.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VND10BSP |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
|
| 2 | VND10N06 |
STMicroelectronics |
fully autoprotected Power MOSFET |
|
| 3 | VND10N06-1 |
STMicroelectronics |
fully autoprotected Power MOSFET |
|
| 4 | VND14NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET |
|
| 5 | VND14NV04-1 |
STMicroelectronics |
fully autoprotected Power MOSFET |
|