VBT4045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A FEATURES TO-263AB K • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • Co.
TO-263AB
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
• Compliant to RoHS Directive 2011/65/EU
1
TYPICAL APPLICATIONS
PIN 1 PIN 2 K HEATSINK
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(DC) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) 40 A 45 V 240 A 0.51 V 150 °C 200 °C
Case: TO-263AB Epoxy meets UL 94 V-0 flammability r.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VBT4045BP-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | VBT4045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VBT4045C-E3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VBT4045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VBT4060C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
6 | VBT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | VBT10200C-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
8 | VBT10202C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VBT1045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
10 | VBT1045C |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VBT1045C-E3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VBT1045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier |