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VBT4045BP |
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| Part Number | VBT4045BP |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | VBT4045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A FEATURES TO-263AB K • Trench MOS Sc... |
| Features |
TO-263AB
K
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • Compliant to RoHS Directive 2011/65/EU 1 TYPICAL APPLICATIONS PIN 1 PIN 2 K HEATSINK For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(DC) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) 40 A 45 V 240 A 0.51 V 150 °C 200 °C Case: TO-263AB Epoxy meets UL 94 V-0 flammability r... |
| Document |
 VBT4045BP Data Sheet
PDF 149.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VBT4045BP-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 2 | VBT4045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VBT4045C-E3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VBT4045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VBT4060C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |
|