www.vishay.com VBT4045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.0 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VBT4045C
PIN 1
K
PIN 2
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package
2 x 20 A 45 V 240 A 0.41 V
150 °C TO-263AB
Diode variations
Commo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VBT4045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VBT4045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VBT4045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | VBT4045BP-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VBT4060C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
6 | VBT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | VBT10200C-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
8 | VBT10202C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VBT1045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
10 | VBT1045C |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VBT1045C-E3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VBT1045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier |