VBT10200C - Vishay

VBT10200C Trench MOS Barrier Schottky Rectifier

www.DataSheet.co.kr New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AB TMBS ® FEATURES ITO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, .

Features

ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 VT10200C PIN 1 PIN 3 PIN 2 CASE 3 1 VFT10200C PIN 1 PIN 3 PIN 2 2 3
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and re.