www.vishay.com VBT4045BP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 1 PIN 2
K HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) Package Circuit configuration
40 A 45 V 240 A 0.51 V 150 °C 200 °C D2PAK (TO-263AB) Single
TYPICAL APPLICATIONS
For use in solar cell junct.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VBT4045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | VBT4045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VBT4045C-E3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VBT4045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VBT4060C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
6 | VBT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | VBT10200C-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
8 | VBT10202C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VBT1045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
10 | VBT1045C |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VBT1045C-E3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VBT1045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier |