VBT10202C-M3 - Vishay

VBT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VT10202C-M3, VBT10202C-M3, VIT10202C-M3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TMBS ® TO-220AB VT10202C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K TO-262AA K FEATURES • Trench MOS Schottky technology generation 2 • Low forward voltage drop, low power lo.

Features

• Trench MOS Schottky technology generation 2
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and TO-262AA package)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. 2 1 VBT10202C PIN 1 K PIN 2 HEATSINK .