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VBT4045BP-E3 |
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| Part Number | VBT4045BP-E3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com VBT4045BP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 F... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PIN 1 PIN 2 K HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) Package Circuit configuration 40 A 45 V 240 A 0.51 V 150 °C 200 °C D2PAK (TO-263AB) Single TYPICAL APPLICATIONS For use in solar cell junct... |
| Document |
 VBT4045BP-E3 Data Sheet
PDF 97.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VBT4045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 2 | VBT4045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VBT4045C-E3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VBT4045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VBT4060C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |
|