www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V30DL50C PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automate.
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package
2 x 15.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V30DL50C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | V30DL50C-M3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
3 | V30DL45 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | V30DL45BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | V30D100C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
6 | V30D170C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | V30D202C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | V30D45C |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | V30D60C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
10 | V30D60CL |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
11 | V30DM100C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
12 | V30DM120 |
Vishay |
Trench MOS Barrier Schottky Rectifier |