www.vishay.com V30D170C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series K 1 2 Top View Bottom View SMPD (TO-263AC) Anode 1 Anode 2 K Cathodde FEATURES • Very low profile - typical height of 1.7 mm Available • Low forward voltage drop, low power losses • High efficiency operation • Meets .
• Very low profile - typical height of 1.7 mm
Available
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
2 x 15.0 A 170 V 260 A
VF at IF = 5.0 A (TA = 125 °C)
0.66 V
TJ max. Pac.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V30D100C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | V30D202C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V30D45C |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | V30D60C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | V30D60CL |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
6 | V30DL45 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | V30DL45BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
8 | V30DL50C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
9 | V30DL50C-M3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
10 | V30DL50CHM3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
11 | V30DM100C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
12 | V30DM120 |
Vishay |
Trench MOS Barrier Schottky Rectifier |