V30DL50C-M3 - Vishay

V30DL50C-M3 Dual Trench MOS Barrier Schottky Rectifier

www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V30DL50C PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automate.

Features

• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15.