www.vishay.com V30DL45BP Vishay General Semiconductor TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low fo.
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode 1 Anode 2
K Cathode
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
45 V
IFSM
200 A
VF at IF = 30 A (TA = 125 °C) TOP max. (AC model)
0.51 V 150 °C
TJ max. (DC forward current)
200 °C
Package
SMPD (T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V30DL45 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | V30DL50C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
3 | V30DL50C-M3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
4 | V30DL50CHM3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
5 | V30D100C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
6 | V30D170C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | V30D202C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | V30D45C |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | V30D60C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
10 | V30D60CL |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
11 | V30DM100C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
12 | V30DM120 |
Vishay |
Trench MOS Barrier Schottky Rectifier |